博鱼体育登录

EN
您所在位置: 首页 >> 师资队伍 >> 副教授 >> 正文
郑志威

系别:微电子与集成电路系

职称:副教授

邮箱:zwzheng@xmu.edu.cn

联系方式:0592-2580041

办公地点:博鱼体育登录翔安校区文宣楼C306-1

个人简历:

学历:

南京理工大学工学学士,电子科学与技术专业

中国科学院微电子研究所工学博士,微电子学与固体电子学专业

台湾交通大学联合培养博士


研究方向:

半导体材料与器件技术、微纳制造工艺、器件模拟仿真


主讲课程:

固体电子学(本科生课)

半导体物理与器件工艺基。ū究粕危

半导体器件物理(研究生课)


成果奖励:

博鱼体育登录第十四届青年教师教学技能比赛二等奖(2019


课题项目:

中央高校基本科研业务费专项,2019-2021,主持

国家重点研发计划政府间国合项目,2019-2022,主要参与

国家自然科学基金青年项目,2018-2020,主持

科学挑战专题项目,2016-2020,主要参与

中国博士后科学基金特别资助,2016-2017,主持

中国博士后科学基金面上资助,2015-2016,主持


代表作:

[1] Z. W. Shang, Z. W. Zheng,* et al, “Performance investigation of an n-type tin-oxide thin film transistor by channel plasma processing,” IEEE J. Electron Devices Soc. 8, 485 (2020).

[2] J. Ma, Z. W. Zheng,* et al, “Characteristic simulation of hybrid multilayer junctionless field effect transistors with negative capacitance effect,” IEEE Trans. Nanotechnol.19, 89 (2020).

[3] W. D. Liu, Z. W. Zheng,* et al, “Impact of series-connected ferroelectric capacitor in HfO2-based ferroelectric field-effect transistors for memory application,” IEEE J. Electron Devices Soc. 8, 1076 (2020).

[4] Z. W. Shang, Z. W. Zheng,* et al, “Progress and challenges in p-type oxide-based thin film transistors,” Nanotechnol. Rev. 8, 422 (2019).

[5] L. M. Zhou, Z. W. Zheng,* et al, “Fabrication and characterization of GaN-based resonant-cavity light-emitting diodes with dielectric and metal mirrors,” ECS J. Solid State Sci. Technol. 7, R34 (2018).

[6] H. C. Yu, Z. W. Zheng, et al, “Progress and prospects of GaN-based VCSEL from near UV to green emission,” Prog. Quant. Electron. 57, 1 (2018).

[7] Z. W. Zheng, et al, “Modulation characteristics of GaN-based light-emitting-diodes for visible light communication,” ECS J. Solid State Sci. Technol. 6, R135 (2017).

[8] P. C. Chen, Z. W. Zheng,* et al, “Performance enhancements in p-type Al-doped tin-oxide thin film transistors by using fluorine plasma treatment,” IEEE Electron Device Lett. 38, 210 (2017).

[9] Y. C. Chiu, Z. W. Zheng,* et al, “Channel modification engineering by plasma processing in tin-oxide thin film transistor: experimental results and first-principles calculation,” ECS J. Solid State Sci. Technol. 6, Q53 (2017).

[10] Z. W. Zheng, et al, “Efficiency enhancement for resonant-cavity-enhanced InGaN/GaN multiple quantum well solar cells,” Vacuum 140, 76 (2017).

[11] P. C. Chen, Z. W. Zheng,* et al, “Influence of plasma fluorination on p-type channel tin-oxide thin film transistors,” J. Alloy Compd. 707, 162 (2017).

[12] P. C. Chen, Z. W. Zheng,* et al, “P-type tin-oxide thin film transistors for blue-light detection application,” Phys. Status Solidi RRL 10, 919 (2016).


博鱼体育登录(游戏)有限公司
Top